| PART |
Description |
Maker |
| CW3HCT52A103F CW3NILCT52A103F CW3PCT52A103F CW12SC |
coat insulated, precision coat insulated and miniature wirewound leaded resistors
|
KOA Speer Electronics, Inc.
KOA Speer Electronics, ...
|
| BCR16B BCR16C BCR16E |
MEDIUM POWER USE A, B, C : NON-INSULATED TYPE, E : INSULATED TYPE, GLASS PASSIVATION TYPE
|
Mitsubishi Electric Sem...
Mitsubishi Electric Corporation
|
| PM200CSE060 |
FLAT-BASE TYPE INSULATED INSULATED PACKAGE 平性基地型绝缘绝缘包装
FLAT-BASE TYPE INSULATED PACKAGE
|
Mitsubishi Electric, Corp.
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| 190050001 0190050004 SD-19005-001 |
InsulKrimp Fully Insulated Coupler
InsulKrimp垄芒 Fully Insulated Coupler
|
Molex Electronics Ltd.
|
| 1900500010 0190050010 C-2265 SD-19005-001 |
InsulKrimp Fully Insulated Female Quick
InsulKrimp垄芒 Fully Insulated Female Quick
|
Molex Electronics Ltd.
|
| MGW12N120 |
Insulated Gate Bipolar Transistor N-Channel
Insulated Gate Bipolar Transistor 20 A, 1200 V, N-CHANNEL IGBT, TO-247AE
|
ONSEMI[ON Semiconductor]
|
| IRG7PH35U-EP IRG7PH35UPBF IRG7PH35UPBF-15 |
55 A, 1200 V, N-CHANNEL IGBT, TO-247AD
INSULATED GATE BIPOLAR TRANSISTOR
INSULATED GATE BIPOLAR TRANSISTOR
|
International Rectifier
|
| GT15Q311 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
|
TOSHIBA[Toshiba Semiconductor]
|
| PM15CNJ060 E80271 E80276 |
MITSUBISHI <INTELLIGENT POWER MODULES> FLAT-BASE TYPE INSULATED PACKAGE 三菱\u003cINTELLIGENT POWER MODULES\u003e平性基地型绝缘包装
INTELLIGENT POWER MODULES FLAT-BASE TYPE INSULATED PACKAGE
MITSUBISHI FLAT-BASE TYPE INSULATED PACKAGE
IPMS Modules: 600V
|
Mitsubishi Electric, Corp.
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
